期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 12, 页码 1680-1683出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2768822
关键词
Electric-double-layer (EDL); flexible thinfilm transistors (TFTs); radio-frequency magnetron sputtered SiO2; InGaZnO
资金
- Engineering and Physical Sciences Research Council (EPSRC) [EP/N021258/1]
- North-West Nanoscience Doctoral Training Centre, EPSRC [EP/G03737X/1]
- National Key Research and Development Program of China [2016YFA0301200]
- National Natural Science Foundation of China [11374185, 11304180]
- EPSRC [EP/N021258/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [1353965, EP/N021258/1] Funding Source: researchfish
Flexible electric-double-layer (EDL) InGaZnO thin-film transistors (TFTs) were fabricated on a plastic substrate at room temperature. A large EDL gate capacitance, 0.22 mu F/cm(2), at 20 Hz was achieved using 200-nm-thick radio frequency magnetron sputtered porous SiO2 as the dielectric layer, which is equivalent to similar to 15.7-nm thermally grown SiO2. The devices, therefore, show a low operating voltage of 1 V, a high current ON-OFF ratio > 10(5), and a low subthreshold swing < 0.12 V/decade. These properties were maintained even after bending, suggesting that the TFTs are suitable for applications in portable sensors and rollable displays.
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