Cross-sectional stress distribution in Al x Ga 1-x N heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction
Cross-sectional stress distribution in Al x Ga 1-x N heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction
作者
关键词
Heterostructure, Residual stress, Ion beam layer removal method, GaN, FIB, Precession electron diffraction
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