4.7 Article

Sub-cycle optical control of current in a semiconductor: from the multiphoton to the tunneling regime

期刊

OPTICA
卷 3, 期 12, 页码 1358-1361

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Optica Publishing Group
DOI: 10.1364/OPTICA.3.001358

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资金

  1. Deutsche Forschungsgemeinschaft (DFG) Cluster of Excellence
  2. Munich-Centre for Advanced Photonics (MAP)
  3. Max-Planck-Gesellschaft (MPG)
  4. Alexander von Humboldt Foundation
  5. Swiss National Science Foundation (SNF)
  6. Marie Curie Fellowship (NANOULOP) [302157]
  7. European Research Council (ERC) (AEDMOS)
  8. Integrated Initiative LASERLAB-Europe
  9. Australian Research Council (ARC) Future Fellowship
  10. BaCaTeC
  11. U.S. Department of Energy (DOE) [DE-AC02-05CH11231]

向作者/读者索取更多资源

Nonlinear interactions between ultrashort optical waveforms and solids can be used to induce and steer electric currents on femtosecond (fs) timescales, holding promise for electronic signal processing at PHz (10(15) Hz) frequencies [Nature 493, 70 (2013)]. So far, this approach has been limited to insulators, requiring extreme peak electric fields (> 1 V/angstrom) and intensities (> 10(13) W/cm(2)). Here, we show all-optical generation and control of electric currents in a semiconductor relevant for high-speed and high-power (opto) electronics, gallium nitride (GaN), within an optical cycle and on a timescale shorter than 2 fs, at intensities at least an order of magnitude lower than those required for dielectrics. Our approach opens the door to PHz electronics and metrology, applicable to lowpower (non-amplified) laser pulses, and may lead to future applications in semiconductor and (photonic) integrated circuit technologies. (C) 2016 Optical Society of America

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