Atmospheric chemical vapor deposition of graphene on molybdenum foil at different growth temperatures

Graphene was grown on molybdenum (Mo) foil by a chemical vapor deposition method at different growth temperatures (1000 degrees C, 1100 degrees C, and 1200 degrees C). The properties of graphene were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy, and Raman spectroscopy. The results showed that the quality of the deposited graphene layer was affected by the growth temperature. XRD results showed the presence of a carbide phase on the Mo surface; the presence of carbide was more intense at 1200 degrees C. Additionally, a higher I-2D/(IG) ratio (0.418) was observed at 1200 degrees C, which implies that there are fewer graphene layers at this temperature. The lowest I-D/I-G ratio (0.908) for the graphene layers was obtained at 1200 degrees C, suggesting that graphene had fewer defects at this temperature. The size of the graphene domains was also calculated. We found that by increasing the growth temperature, the graphene domain size also increased.