期刊
NANOSCALE RESEARCH LETTERS
卷 11, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/s11671-016-1331-y
关键词
Molybdenum disulfide; Layer semiconductor; Nanostructure; Photoconductivity; Responsivity; Gain
资金
- Ministry of Science and Technology (MOST) of Taiwan [NSC 102-2112-M-011-001-MY3, MOST 104-2923-M-011-001-MY3]
Photoconductivities in molybdenum disulfide (MoS2) layered nanostructures with two-hexagonal crystalline structure prepared by mechanical exfoliation were investigated. The photoconductor-type MoS2 nanoflakes exhibit remarkable photoresponse under the above bandgap excitation wavelength of 532 nm at different optical intensity. The photocurrent responsivity and photoconductive gain of nanoflakes can reach, respectively, 30 AW(-1) and 103 at the intensity of 50 Wm(-2), which are several orders of magnitude higher than those of their bulk counterparts. The vacuum-enhanced photocurrent and power-independent responsivity/gain indicate a surface-controlled photoconduction mechanism in the MoS2 nanomaterial.
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