Optical Signature of the Electron Injection in Ga2O3

Electron injection-induced effect and its impact on the optical properties of beta-Ga2O3 ultra-wide bandgap semiconductor have not yet been studied. At the same time, this information is critical for beta-Ga2O3 applications in photovoltaic devices such as, photodetectors. In this work, we report the variable temperature cathodoluminescence studies of silicon-implanted beta-Ga2O3 and identify a possible mechanism for electron injection-induced luminescence decay observed in this material. (C) 2016 The Electrochemical Society.All rights reserved.