Improvement of electron mobility in La:BaSnO3 thin films by insertion of an atomically flat insulating (Sr,Ba)SnO3 buffer layer

标题
Improvement of electron mobility in La:BaSnO3 thin films by insertion of an atomically flat insulating (Sr,Ba)SnO3 buffer layer
作者
关键词
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出版物
AIP Advances
Volume 6, Issue 6, Pages 065305
出版商
AIP Publishing
发表日期
2016-06-08
DOI
10.1063/1.4953808

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