Article
Chemistry, Multidisciplinary
Run Wang, Hengyang Xiang, Yan Li, Yihui Zhou, Qingsong Shan, Yuqin Su, Zhi Li, Yongjin Wang, Haibo Zeng
Summary: This study successfully developed the first monolithic tandem multicolor perovskite LED and white LED, solving issues such as solvent incompatibility, ion exchange, and energy transfer between different emission centers by utilizing an optimal intermediate connection layer. The multicolor LED achieved the best external quantum efficiency of 1.8% and the highest luminance of 4844 cd m(-2). The monolithic white LED reached a color gamut of 130%, offering a feasible strategy for developing wide-color gamut perovskite displays.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
Shukun Li, Menglai Lei, Rui Lang, Guo Yu, Huanqing Chen, Peijun Wen, Muhammad Saddique Akbar Khan, Linghai Meng, Hua Zong, Shengxiang Jiang, Xiaodong Hu
Summary: Inserting an ultra-thin AlGaN electron blocking layer is a major technique to suppress electron leakage currents in GaN-based blue laser diodes. It has been found that the growth conditions of the upper cladding layers affect the composition of the underlying electron blocking layer and significantly reduce the output performance of LEDs and LDs. By introducing a random walk model, the kinetic influence of cladding layer growth rates on electron blocking layer degradation can be quantitatively clarified.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Xu Zhang, Longheng Qi, Wing Cheung Chong, Peian Li, Chak Wah Tang, Kei May Lau
Summary: An active matrix monolithic micro-LED full-color micro-display with a pixel density of 317 ppi is demonstrated, fabricated from large-scale and low-cost GaN-on-Si epilayers. The monolithic 64 x 36 blue micro-LED arrays are transformed into full-color micro-displays by applying a photo-patternable color conversion layer, showing feasible manufacturability and potential for volume production.
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY
(2021)
Article
Nanoscience & Nanotechnology
Sumin Hwangbo, Luhing Hu, Anh Tuan Hoang, Jae Yong Choi, Jong-Hyun Ahn
Summary: This paper presents a novel fabrication method for the integration of transition metal dichalcogenides with compound semiconductors, which is compatible with a batch microfabrication process. The authors demonstrate the synthesis of a thin film of molybdenum disulfide on a gallium-nitride-based epitaxial wafer, which is then used to form a thin film transistor array. This transistor array is subsequently integrated with micro-light-emitting-diode devices to create an active matrix micro-LED display. The authors also show a simple approach for obtaining red and green colors through the printing of quantum dots on a blue micro-LED, enabling the scalable fabrication of full-color micro-LED displays.
NATURE NANOTECHNOLOGY
(2022)
Article
Materials Science, Multidisciplinary
Feng Qin, Cao Liu, Wenhui Wu, Wenxiang Peng, Sitao Huo, Jiandong Ye, Shulin Gu
Summary: In this study, a full-color Micro LED display with red and green quantum dot color conversion layers fabricated by inkjet printing was successfully developed, showing excellent performance.
ELECTRONIC MATERIALS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Peian Li, Xu Zhang, Yangfeng Li, Longheng Qi, Chak Wah Tang, Kei May Lau
Summary: A passive-matrix monolithic full-color InGaN LED microdisplay with 40 x 40 full-color pixels is demonstrated, utilizing red quantum dot photoresist as a color converter for pure RGB emission and achieving a wide color gamut.
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY
(2021)
Article
Physics, Applied
Koichi Goshonoo, Koji Okuno, Masaki Ohya
Summary: We present a monolithic InGaN LED that emits red, green, and blue (RGB) light. The LED has a simple structure with stacked RGB light-emitting layers on n-GaN, removing unnecessary layers based on desired emission color and a stacking p-GaN layer. Electroluminescence characteristics show peak wavelengths at 20 mA to be R: 632.9 nm, G: 519.0 nm, and B: 449.5 nm, with external quantum efficiencies of R: 0.28%, G: 8.3%, and B: 0.84%. This structure allows for smaller and higher-resolution microdisplays through semiconductor processes.
APPLIED PHYSICS EXPRESS
(2023)
Article
Optics
Longheng Qi, Peian Li, Xu Zhang, Ka Ming Wong, Kei May Lau
Summary: A prototype of full-color micro-LED micro-display with a pixel density of 391 ppi is demonstrated using InGaN/AlGaInP heterogeneous integration. This display shows the feasibility and prospects of high brightness, good color performance, and high-resolution micro-LED micro-displays in future metaverse applications.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Optics
Longheng Qi, Xu Zhang, Wing Cheung Chong, Kei May Lau
Summary: This paper demonstrates a monolithic full-color micro-LED microdisplay with a resolution of 423 pixels per inch by integrating a blue GaN-on-Si display module and a quantum dots photoresist color conversion module. The result is a full-color micro-LED display with a wide color gamut and high brightness. The prototype shows potential scalability and low-cost volume production of high-resolution full-color micro-LED microdisplays.
PHOTONICS RESEARCH
(2023)
Article
Engineering, Electrical & Electronic
Haiyong Wang, Wei Mao, Jingtao Luo, Cui Yang, Jiabo Chen, Shenglei Zhao, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao
Summary: A monolithic bidirectional switch based on anti-paralleled two reverse blocking p-GaN HEMTs has been proposed and demonstrated, using recessed Schottky drain technique to reduce on-state voltage and power loss. Significant reduction in parasitic elements and switch area is achieved by monolithic integration. The fabricated bidirectional switch shows good electrical characteristics and successfully functions as an AC power chopper.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Gun-Woo Lee, Jae-Hyeok Oh, Sung-Nam Lee
Summary: This study demonstrates the achievement of full-color monolithic LEDs using hexagonal epitaxial lateral overgrowth and pulse modulation modes. By reducing crystal defects and controlling indium incorporation, the LEDs emit red, green, and blue light with the same intensity, leading to the development of high-performance multifunctional lighting sources.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Optics
Benjie Fan, Xiaoyu Zhao, Jingqiong Zhang, Yuechang Sun, Hongzhi Yang, L. Jay Guo, Shengjun Zhou
Summary: Great progress in heteroepitaxial growth technology has led to the rapid development of III-nitride heteroepitaxial structures and their applications. III-nitride materials have attractive innate bandgap tunability, making them ideal for next-generation solid-state lighting sources like white light-emitting diodes (WLEDs). However, commercial WLEDs using phosphor conversion suffer from poor color rendering index (CRI) and intense blue light, which cannot meet the demands for energy efficiency and healthy lighting.
LASER & PHOTONICS REVIEWS
(2023)
Article
Engineering, Electrical & Electronic
Neha Nain, Stefan Walser, Jonas Huber, Kennith Kin Leong, Johann W. Kolar
Summary: This paper proposes a new type of dual-gate GaN monolithic bidirectional switch (MBDS) that achieves self-reverse-blocking behavior through cascode-diode control. The resulting switch features quasi-ohmic conduction characteristic and single-gate control, without the need for additional sensing or gate drive circuits. The feasibility of the proposed switch is demonstrated through experimental measurements.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Optics
Yaying Liu, Zhaojun Liu, Kei may Lau
Summary: This study presents an all-GaN-based mu LED display with monolithic integrated HEMT and mu LED pixels using the selective area regrowth method. The optimized regrowth pattern improves the crystal quality of regrown mu LED, resulting in high light output power and peak EQE for the mu LED-HEMT. TMAH treatment and Al2O3 surface passivation are performed to minimize nonradiative recombination caused by dry etching damage. Images of HKUST are successfully shown on the customized mu LED-HEMT display board.
Article
Computer Science, Information Systems
Yong Huang, Zhiyou Guo, Miao Zhang, Dan Xiang
Summary: This study investigated the impact of different AlxGa1-xN/GaN superlattice electron blocking layer structures on the performance of GaN-based UV LEDs through simulation analysis, revealing that double-peak SL-EBL significantly improves the internal quantum efficiency of the LEDs.