期刊
RSC ADVANCES
卷 6, 期 28, 页码 23961-23967出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra03436e
关键词
-
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2013R1A2A2A01069023, 2014R1A1A1004632]
We functionalized two-dimensional few-layer MoS2 based FET with graphene oxide (GO) in order to improve its persistent photoconductivity and photoresponse time. Both pristine and GO functionalized devices show n-type semiconductor behavior with high on/off ratio exceeding similar to 10(5). The photoresponse of the GO-MoS2 hybrid device shows almost complete recovery from persistent photoconductivity and a substantial decrease in response time from similar to 15 s in the pristine MoS2 device to similar to 1 s in the GO-MoS2 device. The reasons behind this improvement have been explored and discussed on the basis of electrostatic and photo interaction between GO and MoS2. As GO is a strong candidate for various sensing applications, therefore this intelligent hybrid system, where GO interacts electrostatically with the underlying MoS2 channel, has tremendous potential to add more functionalities to a pristine MoS2 device for realizing various smart nanoscale FET-based biochemical and gas sensors for myriad applications.
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