Heavily N-doped monolayer graphene electrodes used for high-performance N-channel polymeric thin film transistors
出版年份 2016 全文链接
标题
Heavily N-doped monolayer graphene electrodes used for high-performance N-channel polymeric thin film transistors
作者
关键词
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出版物
RSC Advances
Volume 6, Issue 96, Pages 93855-93862
出版商
Royal Society of Chemistry (RSC)
发表日期
2016-09-26
DOI
10.1039/c6ra20496a
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