标题
Monolayer 1T-NbSe2 as a Mott insulator
作者
关键词
-
出版物
NPG Asia Materials
Volume 8, Issue 11, Pages e321-e321
出版商
Springer Nature
发表日期
2016-11-04
DOI
10.1038/am.2016.157
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Unconventional Charge-Density-Wave Transition in Monolayer 1T-TiSe2
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