期刊
SYNTHETIC METALS
卷 221, 期 -, 页码 186-191出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2016.09.002
关键词
Organic field-effect transistors; Phase separation; High mobility; Electrical stability; Bias-stress
资金
- Science and Engineering Research Board, Department of Science and Technology, Government of India [SR/FTP/ETA-47/2012]
Phase separation induced high carrier mobility and electrical stability are achieved in organic field-effect transistors using TIPS-pentacene:polystyrene blends. Rigid Si/SiO2 substrate was especially chosen to explore the phase separation. A vertical phase separation between TIPS-pentacene and polystyrene as confirmed from scanning electron microscopic image, evetually leads to excellent carrier mobility in polymer blend devices compared to that of neat TIPS-pentacene. Maximum hole mobility improved from 0.2 cm(2) V-1 s(-1) for neat TIPS-pentacene on SiO2 to 2.6 cm(2) V-1 s(-1) for TIPS-pentacene blends with PS, with average value of 1.5 cm(2) V-1 s(-1). Apart from higher mobility, TIPS-pentacene:PS blend devices also showed much lower decay in drain current (similar to 30%) during a constant bias-stress of 2 h, compared to neat devices (similar to 80%). Interestingly, This decay was fully recovered for blend devices under rest conditions. The corresponding shift in the threshold voltage due to bias-stress was lower for TIPS-pentacene:PS device due to better quality of interface as confirmed by lower values of density of interface traps and higher trapping time. High electrical stability in TIPS-pentacene:polystyrene blend devices was also supported by repeatabiliiy studies, which exhibited nearly unchanged device characteristics. (C) 2016 Elsevier B.V. All rights reserved.
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