期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 31, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/31/12/125001
关键词
Te doping; pin junction; GaAsSb nanowire
类别
资金
- Army Research Office [W911NF-15-1-0160]
- State of North Carolina
- National Science Foundation
We report on in situ Te-doping in GaAs1-xSbx nanowires (NWs) grown via self-assisted molecular beam epitaxy. Enhanced Te incorporation in the NW at higher Te cell temperature was attested by the broadening of the x-ray diffraction peak and the presence of a strong coupled-LO phonon mode in the Raman spectra. Te-doping was estimated from the shift in the coupled-LO phonon mode to be similar to 2.0. x. 10(18)/cm(3). The surfactant nature of the Te modulated the growth kinetics, which was manifested in an enhanced radial growth rate with improved photoluminescence (PL) characteristics at both room temperature (RT) and 4 K. No noticeable planar defects were observed as ascertained from the high-resolution transmission electron microscopy images and selected-area electron diffraction patterns. Finally, we demonstrate the experimental realization of a GaAs1-xSbx axial p-type/intrinsic/n-type (p-i-n) structure on a Si substrate with Te as the n-type dopant. The GaAs1-xSbx p-i-n NW structures exhibited rectifying current-voltage (I-V) behavior. The dopant concentration and the transport parameters estimated from the PL spectra and I-V curve were found to be in good agreement.
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