Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices
出版年份 2016 全文链接
标题
Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices
作者
关键词
-
出版物
PHYSICAL REVIEW LETTERS
Volume 117, Issue 18, Pages -
出版商
American Physical Society (APS)
发表日期
2016-10-28
DOI
10.1103/physrevlett.117.186601
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Edge transport in the trivial phase of InAs/GaSb
- (2016) Fabrizio Nichele et al. NEW JOURNAL OF PHYSICS
- Quantum Hall resistance standard in graphene devices under relaxed experimental conditions
- (2015) R. Ribeiro-Palau et al. Nature Nanotechnology
- Spatially resolved edge currents and guided-wave electronic states in graphene
- (2015) M. T. Allen et al. Nature Physics
- Robust Helical Edge Transport in GatedInAs/GaSbBilayers
- (2015) Lingjie Du et al. PHYSICAL REVIEW LETTERS
- Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry
- (2015) Eric Yue Ma et al. Nature Communications
- Field effect in the quantum Hall regime of a high mobility graphene wire
- (2014) C. Barraud et al. JOURNAL OF APPLIED PHYSICS
- Visualisation of edge effects in side-gated graphene nanodevices
- (2014) Vishal Panchal et al. Scientific Reports
- Quantum Hall transport as a probe of capacitance profile at graphene edges
- (2013) I. J. Vera-Marun et al. APPLIED PHYSICS LETTERS
- Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
- (2013) C.-Z. Chang et al. SCIENCE
- One-Dimensional Electrical Contact to a Two-Dimensional Material
- (2013) L. Wang et al. SCIENCE
- Enhanced Carrier Transport along Edges of Graphene Devices
- (2012) Jungseok Chae et al. NANO LETTERS
- Quantum Hall effect in narrow graphene ribbons
- (2012) H. Hettmansperger et al. PHYSICAL REVIEW B
- Unveiling quantum Hall transport by Efros-Shklovskii to Mott variable-range hopping transition in graphene
- (2012) K. Bennaceur et al. PHYSICAL REVIEW B
- Effective mobility of single-layer graphene transistors as a function of channel dimensions
- (2011) Archana Venugopal et al. JOURNAL OF APPLIED PHYSICS
- Metrology and microscopic picture of the integer quantum Hall effect
- (2011) J. Weis et al. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
- Imaging of Coulomb-Driven Quantum Hall Edge States
- (2011) Keji Lai et al. PHYSICAL REVIEW LETTERS
- Cryogenic microwave imaging of metal–insulator transition in doped silicon
- (2011) Worasom Kundhikanjana et al. REVIEW OF SCIENTIFIC INSTRUMENTS
- Conductivity of a graphene strip: Width and gate-voltage dependencies
- (2010) F. T. Vasko et al. APPLIED PHYSICS LETTERS
- Towards a quantum resistance standard based on epitaxial graphene
- (2010) Alexander Tzalenchuk et al. Nature Nanotechnology
- Quantized Anomalous Hall Effect in Magnetic Topological Insulators
- (2010) R. Yu et al. SCIENCE
- Quantum resistance metrology in graphene
- (2008) A. J. M. Giesbers et al. APPLIED PHYSICS LETTERS
- Charge accumulation at the boundaries of a graphene strip induced by a gate voltage: Electrostatic approach
- (2008) P. G. Silvestrov et al. PHYSICAL REVIEW B
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