Influence of the Metal Work Function on the Photocatalytic Properties of TiO2 Layers on Metals

The photocatalytic properties of titanium dioxide (TiO2) layers on different metal plates are investigated. The metal-semiconductor interface can be described as a Schottky contact, and is part of a depletion layer for the majority carriers in the semiconductor. Many researchers have demonstrated an increase in the photocatalytic activity, due to the formation of a metal-semiconductor contact that are obtained by deposition of small metal islands on the semiconductor. Nevertheless, the influence of a Schottky contact remains uncertain, sparking much interest in this field. The immobilization of nanoparticulate TiO2 layers by dip-coating on different metal substrates results in the formation of a Schottky contact. The recombination rate of photoinduced electron-hole pairs decreases at this interface provided that the thickness of the thin TiO2 layer has a similar magnitude to the depletion layer. The degradation of dichloroacetic acid in aqueous solution and of acetaldehyde in a gas mixture is investigated to obtain information concerning the influence of the metal work function of the back contact on the efficiency of the photocatalytic process.