标题
Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions
作者
关键词
-
出版物
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 18, Issue 24, Pages 16367-16376
出版商
Royal Society of Chemistry (RSC)
发表日期
2016-05-17
DOI
10.1039/c6cp01866a
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Monolayer Phosphorene–Metal Contacts
- (2016) Yuanyuan Pan et al. CHEMISTRY OF MATERIALS
- Does p-type ohmic contact exist in WSe2–metal interfaces?
- (2016) Yangyang Wang et al. Nanoscale
- Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
- (2016) Hongxia Zhong et al. Scientific Reports
- Spin-Valve Effect in NiFe/MoS2/NiFe Junctions
- (2015) Weiyi Wang et al. NANO LETTERS
- MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors
- (2014) Deblina Sarkar et al. ACS Nano
- Atomically thin p–n junctions with van der Waals heterointerfaces
- (2014) Chul-Ho Lee et al. Nature Nanotechnology
- Dependence of the electronic and transport properties ofmetal-MoSe2interfaces on contact structures
- (2014) Deniz Çakır et al. PHYSICAL REVIEW B
- Efficient spin injection and giant magnetoresistance inFe/MoS2/Fejunctions
- (2014) Kapildeb Dolui et al. PHYSICAL REVIEW B
- The valley Hall effect in MoS2 transistors
- (2014) K. F. Mak et al. SCIENCE
- Edge Nonlinear Optics on a MoS2 Atomic Monolayer
- (2014) X. Yin et al. SCIENCE
- Electroluminescence in Single Layer MoS2
- (2013) R. S. Sundaram et al. NANO LETTERS
- Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
- (2013) Britton W. H. Baugher et al. NANO LETTERS
- Ultrasensitive photodetectors based on monolayer MoS2
- (2013) Oriol Lopez-Sanchez et al. Nature Nanotechnology
- Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
- (2013) Sanfeng Wu et al. Nature Physics
- Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
- (2013) Min Sup Choi et al. Nature Communications
- Graphene As a Tunnel Barrier: Graphene-Based Magnetic Tunnel Junctions
- (2012) Enrique Cobas et al. NANO LETTERS
- Valley polarization in MoS2 monolayers by optical pumping
- (2012) Hualing Zeng et al. Nature Nanotechnology
- Control of valley polarization in monolayer MoS2 by optical helicity
- (2012) Kin Fai Mak et al. Nature Nanotechnology
- Strain-dependent electronic and magnetic properties of MoS2 monolayer, bilayer, nanoribbons and nanotubes
- (2012) Peng Lu et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Designing Electrical Contacts toMoS2Monolayers: A Computational Study
- (2012) Igor Popov et al. PHYSICAL REVIEW LETTERS
- Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
- (2012) Di Xiao et al. PHYSICAL REVIEW LETTERS
- Mechanical and electronic properties of monolayer MoS2 under elastic strain
- (2012) Qu Yue et al. PHYSICS LETTERS A
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride
- (2009) Oleg V. Yazyev et al. PHYSICAL REVIEW B
- Covalent radii revisited
- (2008) Beatriz Cordero et al. DALTON TRANSACTIONS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now