Stability, bonding, and electronic properties of silicon and germanium arsenides

N-type doping of Ge by As implantation and excimer laser annealing

(2014) R. Milazzo et al.   JOURNAL OF APPLIED PHYSICS

Process simulation of dopant diffusion and activation in germanium

(2013) Nikolas Zographos et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Lattice position and thermal stability of diluted As in Ge

(2012) S. Decoster et al.   JOURNAL OF APPLIED PHYSICS

A novel low compressible and superhard carbon nitride: Body-centered tetragonal CN2

(2012) Quan Li et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

First principles calculations on structure, bonding, and vibrational frequencies of SiP2

(2011) F. Bachhuber et al.   JOURNAL OF CHEMICAL PHYSICS

Phonons in SiAs: Raman scattering study and DFT calculations

(2011) Jürgen Kutzner et al.   JOURNAL OF RAMAN SPECTROSCOPY

Structural, elastic constants, hardness, and optical properties of pyrite-type dinitrides (CN2, SiN2, GeN2)

(2011) Y.C. Ding et al.   PHYSICA B-CONDENSED MATTER

Diffusion and doping issues in germanium

(2010) H. Bracht et al.   MICROELECTRONIC ENGINEERING

Evidence of atomic-scale arsenic clustering in highly doped silicon

(2009) S. Duguay et al.   JOURNAL OF APPLIED PHYSICS

Diffusion and activation of n-type dopants in germanium

(2008) Masahiro Koike et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

(2008) Sergej Brotzmann et al.   JOURNAL OF APPLIED PHYSICS