Tuning the hysteresis voltage in 2D multilayer MoS2 FETs

标题

作者

关键词

MoS, 2, Two-dimensional materials, Hysteresis voltage, Traps, Field-effect transistors

出版物

Volume 498, Issue -, Pages 76-81

出版商

Elsevier BV

发表日期

2016-06-28

DOI

10.1016/j.physb.2016.06.025

联系作者

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