Memory behavior of multi-bit resistive switching based on multiwalled carbon nanotubes

标题
Memory behavior of multi-bit resistive switching based on multiwalled carbon nanotubes
作者
关键词
Ni/MWCNTs:PMMA/ITO, Ternary WORM, Multi-bit resistive switching, Nanocomposite
出版物
ORGANIC ELECTRONICS
Volume 34, Issue -, Pages 12-17
出版商
Elsevier BV
发表日期
2016-04-09
DOI
10.1016/j.orgel.2016.03.041

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