4.6 Article

Performance enhancement in mechanically stable flexible organic-field effect transistors with TIPS-pentacene:polymer blend

期刊

ORGANIC ELECTRONICS
卷 34, 期 -, 页码 284-288

出版社

ELSEVIER
DOI: 10.1016/j.orgel.2016.04.039

关键词

Organic field-effect transistors (OFETs); Flexible; TIPS-pentacene crystal; Bending; Mechanical stability; Bias stress

资金

  1. Department of Science and Technology, Government of India [SR/FTP/ETA-47/2012]
  2. Science and Engineering Research Board

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Flexible organic field-effect transistors (OFETs) with TIPS-pentacene: polystyrene (PS) blend are demonstrated to exhibit enhanced mobility and significantly improved electrical stability compared to neat TIPS-pentacene on poly(4-vinylphenol) (PVP) dielectric (bi-layer OFETs), along with high mechanical stability. Due to merit of high quality dielectric-semiconductor interface, pristine TIPS-pentacene: PS blend OFETs exhibited maximum mobility of 0.93 cm(2) V-1 s(-1) with average of 0.44(+/- 0.25) cm(2) V-1 s(-1) compared to 0.14(+/- 0.10) cm(2) V-1 s(-1) for bi-layer OFETs with high current on-off ratios on the order 10(5) for both. Both types of devices exhibited high electrical stability upon bending with increasing magnitude of strain or its duration up to 5 days. However, significant differences in electrical stability of devices were observed upon applying constant bias-stress for 40 min to 1 h. Pristine blend devices exhibited outstanding electrical stability with very low drain current decay of <5% compared to similar to 30% for bi-layer devices. Even upon bias-stress after 5 days of bending, the drain current decay levels were only changed to <10% and similar to 50% for blend and bi-layer devices respectively. (C) 2016 Elsevier B.V. All rights reserved.

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