期刊
出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2016.03.034
关键词
ZnO; Particle implantation; Defect; Visible absorption
类别
资金
- National Natural Science Foundation of China [11275054]
- International Science & Technology Cooperation Program of China [2015DFR50400]
The discrepancy between sub-bandgap absorption in ZnO induced by thermal annealing and H+ implantation is investigated in this study for the first time. Results indicate that nonreductive annealing-induced optical absorption is independent of annealing ambient, and can be assigned to V-o, whereas the absorption centers caused by H+ implantation and H-2 annealing are primarily associated with V-o and ionized Zn-i. (C) 2016 Elsevier B.V. All rights reserved.
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