期刊
CHEMICAL VAPOR DEPOSITION
卷 21, 期 10-12, 页码 369-374出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/cvde.201507193
关键词
APCVD; N-2 flow rate; Vanadium dioxide; Electrochemical properties
The growth of vanadium dioxide is carried out using chemical vapor deposition with N-2 flow rates of 1, 1.4 and 2.2 L min(-1) through the vanadium precursor bubbler. The presence of both monoclinic and metastable vanadium dioxide phases with the co-existence of nanocrystallites and outgrowths on the coating surface is observed for the 1 L min(-1). Additionally, the electrochemical performance for this sample is enhanced and the specific discharge capacity was the highest presenting capacitance retention of 97% after 500 scans. Finally, it is found that the diffusion of Li+ through the cathode/electrolyte interface is easier enhancing its capacitive performance.
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