Physicochemical Fundamentals of the Synthesis of a Cu@BN Composite Consisting of Nanosized Copper Enclosed in a Boron Nitride Matrix

The thermal reduction of the copper(II) complexes [Cu-II(N2H4)(3)][B10H10].nH(2)O (I.nH(2)O) and [Cu-II(NH3)(4)][B10H10].nH(2)O (II.nH(2)O) has been studied in an argon atmosphere at 900 degrees C. It has been found that the annealing of both compounds results in a Cu@BN boron-containing copper composite. It has been shown that this process leads to the formation of a boron nitride matrix doped with cubic copper(0) nanoparticles due to the copper(II)?copper(I)?copper(0) thermal reduction. The phase composition of annealing products I-900 and II900 has been determined based on powder X-ray diffraction, IR spectroscopy and thermal analysis data. The morphology, average particle size and composition of the composite have been determined by TEM and high-resolution TEM + EDS. The average particle size has been found to be about 81 nm and 52 nm for samples I-900 and II900, respectively. Comparison of the results obtained using physicochemical studies has shown the identity of the composition of the products of annealing I-900 and II900. The electrical properties of a coating based on an I-900 sample modified with Cu-0?Cu2O in situ during deposition on a chip at 300 degrees C in air have been studied. As a result, with increasing temperature, an increase in the electrical conductivity characteristic of semiconductors has been observed.

Automated summary

The thermal reduction of copper(II) complexes was studied at 900 degrees C in an argon atmosphere. It was found that annealing resulted in the formation of a boron-containing copper composite with copper(0) nanoparticles. Physicochemical studies confirmed the composition and electrical properties of the annealed products.