Power efficient MoS2 synaptic devices based on Maxwell–Wagner interfacial charging in binary oxides

标题
Power efficient MoS2 synaptic devices based on Maxwell–Wagner interfacial charging in binary oxides
作者
关键词
-
出版物
2D Materials
Volume 11, Issue 1, Pages 015009
出版商
IOP Publishing
发表日期
2023-10-10
DOI
10.1088/2053-1583/ad015f

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