期刊
NANOTECHNOLOGY
卷 27, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/6/065204
关键词
ZnO; random laser; electroluminescence; nanowire; electrical pumping
资金
- Department of Energy [DE-FG02-08ER-46520]
An electrically pumped Sb-doped ZnO nanowire/Ga-doped ZnO p-n homojunction random laser is demonstrated. Catalyst-free Sb-doped ZnO nanowires were grown on a Ga-doped ZnO thin film on a Si substrate by chemical vapor deposition. The morphology of the as-grown titled nanowires was observed by scanning electron microscopy. X-ray photoelectron spectroscopy results indicated the incorporation of Sb dopants. Shallow acceptor states of Sb-doped nanowires were confirmed by photoluminescence measurements. Current-voltage measurements of ZnO nanowire structures assembled from p-and n-type materials showed a typical p-n diode characteristic with a threshold voltage of about 7.5 V. Very good photoresponse was observed in the UV region operated at 0 V and different reverse biases. Random lasing behavior with a low-threshold current of around 10 mA was demonstrated at room temperature. The output power was 170 nW at 30 mA.
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