4.6 Article

Persistent Photoconductivity Control in Zn-Doped SnO2 Thin Films for the Performance Enhancement of Solar-Blind Ultraviolet Photodetectors

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ACS PHOTONICS
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AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.3c00687

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oxygen vacancy; persistent photoconductivity; solar-blind; tin oxide; ultraviolet photodetector

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This study reports the effective control of persistent photoconductivity in Zn-doped SnO2 thin films and the enhancement of the performance of solar-blind UV photodetectors. Zn doping plays a critical role in reducing dark current and persistent photoconductivity, thereby increasing photosensitivity and shortening response times.
SnO2 has received much attention as one of the transparent oxide semiconductors, which can be used in various applications, such as photocatalysts, chemical sensors, and ultraviolet (UV) photodetectors. However, SnO2 has suffered from severe persistent photoconductivity, which degraded the photodetector performance by slowing the response speed. Here, we report the effective control of persistent photoconductivity and enhanced the performance of the UV photodetector based on Zn-doped SnO2 thin films. The SnO2 thin films with the Zn content varying from 0 to 50 mM were grown by spray pyrolysis deposition. The structural and chemical investigations verified that the Zn atoms were successfully incorporated into the SnO2 lattice as the Zn content was less than 10 mM. As the Zn content exceeded 30 mM, a secondary phase, Zn2SnO4, was formed in the SnO2 layer. The undoped SnO2 exhibited n-type conductivity with a charge carrier concentration of 5.77 x 10(19) cm(-3), which resulted in a high dark current with severe persistent photocurrent. As the doping content increases to 10 mM, the charge carrier concentration drastically reduces to 3.65 x 10(13) cm(-3), significantly reducing dark current and persistent photoconductivity. Therefore, Zn doping played a critical role in enhancing the solar-blind UV photodetector performances by increasing the photosensitivity and shortening the response times. The free-space optical communication system was successfully demonstrated by using the solar-blind UV photodetector based on the Zn-doped SnO2 thin film without any interference from daylight.

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