Article
Materials Science, Multidisciplinary
Rui Zhu, Huili Liang, He Bai, Tao Zhu, Zengxia Mei
Summary: Oxygen vacancy (VO) defects are common in oxide semiconductors and are considered to have both positive and negative effects in detectors. This study constructs a simple two-terminal architecture on amorphous Ga2O3 double layers and uses a periodic bias-switching working method to suppress persistent photoconductivity (PPC) and achieve high refresh rate and other excellent performance indicators.
APPLIED MATERIALS TODAY
(2022)
Article
Nanoscience & Nanotechnology
Ling-Xuan Qian, Zhiwen Gu, Xiaodong Huang, Hongyu Liu, Yuanjie Lv, Zhihong Feng, Wanli Zhang
Summary: This study presents a metal-semiconductor-metal photodetector with a beta-Ga2O3 homojunction structure achieved by low-energy surface fluorine plasma treatment for surface passivation. The fluorine dopants were used to passivate oxygen vacancies and suppress surface chemisorption, resulting in an improvement in both dark and photo current characteristics. The sensitivity was enhanced by nearly 1 order of magnitude, showcasing competitive comprehensive properties for beta-Ga2O3 solar-blind metal-semiconductor-metal photodetectors.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Physical
Kang Ling, Kuangkuang Li, Wenbo Li, Wanli Zhang, Zongyu Wang, Xingzhao Liu
Summary: This study proposes a new sensitization engineering strategy using surface fluorine plasma (SFP) treatment to enhance the performance of ZnGa2O4 MSM solar-blind UV photodetectors. Through this strategy, oxygen vacancy defects are passivated and the ratio of adsorbed oxygen species on the surface of the ZnGa2O4 thin film is changed, optimizing the current performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Engineering, Electrical & Electronic
Xue-Qiang Ji, Ming-Yu Liu, Zu-Yong Yan, Shan Li, Zeng Liu, Xiao-Hui Qi, Jian-Ying Yuan, Jin-Jin Wang, Yuan-Chun Zhao, Wei-Hua Tang, Pei-Gang Li
Summary: A surface VO defect compensation engineering using oxygen-plasma treatment was conducted to improve the device performance of beta-Ga2O3 film. The treated photodetectors showed significantly improved dark current, responsivity rejection ratio, rise and decay speed, and high sensitivity to detect weak UV signals.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Multidisciplinary
Jiale Liu, Sheng Li, Shuang Liu, Yanmeng Chu, Ting Ye, Cheng Qiu, Zexiong Qiu, Xiadong Wang, Yifan Wang, Yaqiong Su, Yue Hu, Yaoguang Rong, Anyi Mei, Hongwei Han
Summary: This study demonstrates the use of magnesium (Mg) to manage oxygen vacancies (OVs) and achieve efficient printable perovskite solar cells (PSCs) with a high-temperature mesoporous SnO2 electron transport layer (ETL). The high-temperature annealing process reduces self-doping of SnO2 by reducing OVs, while the introduced Mg promotes OV formation. The synergistic effect of Mg on OVs increases carrier density and raises the Fermi level energy of the mp-SnO2 ETL, resulting in a significant improvement in device performance.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2022)
Article
Chemistry, Multidisciplinary
Yanan Zhang, Shujie Jiao, Junhua Zhang, Shuo Liu, Dongbo Wang, Shiyong Gao, Jinzhong Wang
Summary: A GaOOH/Ga2O3 heterojunction was achieved through a one-step annealing treatment, and its solar blind photoresponse performance was characterized using photoelectrochemical detectors. The results showed that the GaOOH/Ga2O3 heterojunction detector exhibited superior performance in pure solar-blind ultraviolet detection.
Article
Materials Science, Multidisciplinary
Ziying Tang, Huying Zheng, Bicheng Wang, Lisheng Wang, Yaqi Wang, Runchen Wang, Zhiren Qiu, Xianghu Wang, Shichen Su, Lin Li, Hai Zhu
Summary: In this report, a high performance beta-phase Ga203 single-crystalline film deep ultraviolet (DUV) solar-blind photodetector was successfully fabricated using the hybrid Ga/GaO buffer layer method. The detector exhibited low dark-state current and high UV photon responsibility. It also demonstrated ultrafast transient characteristics for DUV signals and was capable of capturing high contrast two-dimensional scanning images.
MATERIALS TODAY PHYSICS
(2023)
Article
Chemistry, Physical
Hongyu Ma, Kewei Liu, Zhen Cheng, Zhiyao Zheng, Yinzhe Liu, Peixuan Zhang, Xing Chen, Deming Liu, Lei Liu, Dezhen Shen
Summary: The study focuses on the response speed and dark current issues of ZnO quantum dots photodetector, demonstrating improved performance by adjusting reaction conditions. The device shows excellent performance under UV light illumination, providing insights for the design of high-performance photodetectors based on ZnO QDs.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Physics, Multidisciplinary
Haitao Zhou, Lujia Cong, Jiangang Ma, Bingsheng Li, Haiyang Xu, Yichun Liu
Summary: By constructing MSM Schottky photodetectors on Ga2O3 films, high gain and responsivity were achieved, with the effective suppression of persistent photoconductivity (PPC) through modulation of the Schottky junction width using positive pulse voltage. This study provides insights into the mechanisms of gain and PPC in Ga2O3 Schottky devices, paving the way for high responsivity and fast response in such detectors.
Article
Nanoscience & Nanotechnology
Li Zhang, Zhenhua Wei, Xiuxiu Wang, Luoyu Zhang, Yi Wang, Chao Xie, Tao Han, Feng Li, Wei Luo, Dongxu Zhao, Mingsheng Long, Lei Shan
Summary: Metal mirror-enhanced Ta0.01W0.99Se2/SnS2 (TWS) heterodiode-based SBUV photodetector has a high photoresponsivity and fast response speed, making it suitable for a wide range of applications such as missile plume tracking, flame detection, environmental monitoring, and optical communication. This study provides an alternative method for designing fast-speed SBUV photodetectors with great potential in applications.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
Mei Cui, Yang Xu, Xinyu Sun, Zhengpeng Wang, Hehe Gong, Xuanhu Chen, Tiancheng Hu, Yijun Zhang, Fang-fang Ren, Shulin Gu, Jiandong Ye, Rong Zhang
Summary: In this study, Ga2O3 solar blind photodetectors with different metal-semiconductor contact configurations were constructed and their performance was compared. The Ti/Ga2O3/Ti device operated in a photoconductive mode with high responsivity and rejection ratio, but exhibited sub-gap response and high dark current. The Ni/Ga2O3/Ni device operated in a mixed photovoltaic and photoconductive mode with decent photoresponsivity, high rejection ratio, and eliminated slow photoresponse.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Song Qi, Jiahang Liu, Jianying Yue, Xueqiang Ji, Jiaying Shen, Yongtao Yang, Jinjin Wang, Shan Li, Zhenping Wu, Weihua Tang
Summary: In this work, a graphene/beta-Ga2O3/Ag asymmetric Schottky junction photodetector was constructed to address the issue of elevated dark currents in existing graphene/Ga2O3 devices. By taking advantage of the asymmetric structure design to suppress dark current and the transparent graphene electrode to increase carrier collection efficiency, the device achieved outstanding responsivity, detectivity, external quantum efficiency, and response time. Importantly, it exhibited low dark current and high light-to-dark ratio. Overall, the graphene/beta-Ga2O3/Ag asymmetric Schottky junction photodetector has considerable potential as a deep ultraviolet detector.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Nanoscience & Nanotechnology
Yaqi Gao, Jiankun Yang, Xiaoli Ji, Rui He, Jianchang Yan, Junxi Wang, Tongbo Wei
Summary: In this study, high-quality semipolar AlGaN epitaxial films were successfully obtained on m-plane sapphire substrates by metal-organic chemical vapor deposition. The fabricated semipolar AlGaN metal-semiconductor-metal solar-blind ultraviolet photodetector exhibited high responsivity and fast response, with significantly reduced dark current through a simple wet chemical etching method. This work shows potential for the development of high-performance solar-blind ultraviolet photodetectors.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Dongyang Han, Kewei Liu, Jialin Yang, Xing Chen, Binghui Li, Lei Liu, Dezhen Shen
Summary: Interface engineering, specifically the insertion of an SiO2 interfacial layer, significantly improved the performance of p-Si/n-ZnGa2O4 heterojunction solar-blind ultraviolet photodetectors. The SiO2 layer reduced dark current, improved photo-to-dark current ratio and detectivity, and decreased rise and decay times of the device. Additionally, the large conduction band offset of Si/SiO2 effectively blocked visible-light-generated electrons, enhancing the UV-visible rejection ratio of the photodetector.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Materials Science, Ceramics
Jun Lin, Zhao Wang, Xiuyu Lin, Xuan Wei, Wei Zheng, Qichang Hu
Summary: AlN has great potential for ultraviolet detectors due to its characteristics of ultra-wide bandgap, radiation resistance, high thermal and chemical stability. However, its application in solar-blind ultraviolet detection is limited by the absorption cutoff edge. In this study, a photovoltaic SBUV detector with p-Gr/i-AlZnN/n-Si heterojunction structure is fabricated using amorphous AlZnN film with an absorption cutoff edge of 258 nm. The device exhibits outstanding SBUV detection performance, indicating the potential for the preparation of AlZnN SBUV detectors with excellent performance.
CERAMICS INTERNATIONAL
(2023)