期刊
NANOSCALE
卷 8, 期 10, 页码 5682-5687出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr07504a
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资金
- Sandia's Solid-State-Lighting Science Energy Frontier Research Center
- U. S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences
- Sandia's Laboratory Directed Research and Development program
- U. S. DOE, Office of Science, Office of Basic Energy Sciences, Materials Science and Engineering Division
- Lock-heed Martin Corporation
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444 kW cm(-2) and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.
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