Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy

Modeling Interaction in Nanowire Growth Process Toward Improved Yield

(2017) Faranak Fathi Aghdam et al.   IEEE Transactions on Automation Science and Engineering

Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

(2016) J. Treu et al.   APPLIED PHYSICS LETTERS

Plateau–Rayleigh Crystal Growth of Nanowire Heterostructures: Strain-Modified Surface Chemistry and Morphological Control in One, Two, and Three Dimensions

(2016) Robert W. Day et al.   NANO LETTERS

Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links

(2016) Hyunseok Kim et al.   NANO LETTERS

Simultaneous Selective-Area and Vapor–Liquid–Solid Growth of InP Nanowire Arrays

(2016) Qian Gao et al.   NANO LETTERS

Interface dynamics and crystal phase switching in GaAs nanowires

(2016) Daniel Jacobsson et al.   NATURE

Growth of wurtzite GaP in InP/GaP core–shell nanowires by selective-area MOVPE

(2015) Fumiya Ishizaka et al.   JOURNAL OF CRYSTAL GROWTH

Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires

(2015) Giacomo Priante et al.   NANO LETTERS

High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal–Organic Chemical Vapor Deposition

(2015) Alan C. Farrell et al.   NANO LETTERS

InxGa1−xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology

(2015) Amira S Ameruddin et al.   NANOTECHNOLOGY

Growth parameter design for homogeneous material composition in ternary GaxIn1−xP nanowires

(2015) Alexander Berg et al.   NANOTECHNOLOGY

Efficient water reduction with gallium phosphide nanowires

(2015) Anthony Standing et al.   Nature Communications

Shockley–Queisser Detailed Balance Efficiency Limit for Nanowire Solar Cells

(2015) Nicklas Anttu   ACS Photonics

Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires

(2014) D. Rudolph et al.   APPLIED PHYSICS LETTERS

Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

(2014) Marion J. L. Sourribes et al.   NANO LETTERS

Vertical III–V Nanowire Device Integration on Si(100)

(2014) Mattias Borg et al.   NANO LETTERS

Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing

(2014) Qian Gao et al.   NANO LETTERS

Indium-Rich InGaP Nanowires Formed on InP (111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy

(2013) Fumiya Ishizaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of Vertical GaAs Nanowires on an Amorphous Substrate via a Fiber-Textured Si Platform

(2013) Yann Cohin et al.   NANO LETTERS

Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

(2012) Jesper Wallentin et al.   APPLIED PHYSICS LETTERS

Characteristics of Strain-Induced InxGa1–xAs Nanowires Grown on Si(111) Substrates

(2012) Jae Cheol Shin et al.   CRYSTAL GROWTH & DESIGN

Bidirectional Growth of Indium Phosphide Nanowires

(2012) Keitaro Ikejiri et al.   NANO LETTERS

A III–V nanowire channel on silicon for high-performance vertical transistors

(2012) Katsuhiro Tomioka et al.   NATURE

Composition and Bandgap-Graded Semiconductor Alloy Nanowires

(2011) Xiujuan Zhuang et al.   ADVANCED MATERIALS

Transport and strain relaxation in wurtzite InAs–GaAs core-shell heterowires

(2011) Karen L. Kavanagh et al.   APPLIED PHYSICS LETTERS

Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy

(2011) Yoshinori Kohashi et al.   JOURNAL OF CRYSTAL GROWTH

Selective-area growth of III-V nanowires and their applications

(2011) Katsuhiro Tomioka et al.   JOURNAL OF MATERIALS RESEARCH

Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

(2011) Emanuele Uccelli et al.   NANO LETTERS

Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

(2010) S. Hertenberger et al.   JOURNAL OF APPLIED PHYSICS

Light Trapping in Silicon Nanowire Solar Cells

(2010) Erik Garnett et al.   NANO LETTERS

Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires

(2009) A. Maharjan et al.   APPLIED PHYSICS LETTERS

Size effects of the bending stiffness of nanowires

(2009) Xian-Fang Li et al.   JOURNAL OF APPLIED PHYSICS

The fabrication of dense and uniform InAs nanowire arrays

(2009) A I Persson et al.   NANOTECHNOLOGY

Nanowire photonics

(2009) Ruoxue Yan et al.   Nature Photonics

Core–shell nanowires: From the ensemble to single-wire characterization

(2009) Mario Keplinger et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

(2008) A. Fontcuberta i Morral et al.   APPLIED PHYSICS LETTERS

Control of InAs Nanowire Growth Directions on Si

(2008) Katsuhiro Tomioka et al.   NANO LETTERS

The effects of surface and initial stresses on the bending stiffness of nanowires

(2008) H X Zhu   NANOTECHNOLOGY