GaAsP Nanowires Grown by Aerotaxy

We have grown GaAsP nanowires with high optimal and structural quality by Aerotaxy, a new continuous-gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH3/AsH3 ratio and growth temperature, size selected GaAs1-xPx nanowires (80 run diameter) with pure zinc-blende structure and with direct band gap energies ranging, from 1.42 to 1.90 eV (at 300 K), :(i.e., 0 <= x <= 0.43) we're grown, which is the energy range needed for creating tandem III-V sorar cells on silicon. The phosphorus content in-the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This, proves the feasibility of,,growing GaAsP nanowires by Aerotaxy and results indicate that it is-a generic process that, can be applied to the growth Of other III-V semiconductor based ternary nanowires.