期刊
NANO LETTERS
卷 16, 期 10, 页码 6130-6136出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b02348
关键词
ionic liquid gating; oxide interface; quantum confinement; nonlinear Hall effect; SrTiO3 dielectric constant; disorder
类别
资金
- Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- Stanford Graduate Fellowship in Science and Engineering
- ONR-MURI [N00014-12-1-0976]
Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimerisional electron systems. In order to disentangle their individual contributions to quantum phenomena) independent tuning of these two parameters is required. Here, by utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO3/SrTiO3 heterointerface, we obtain an additional degree of freedom te strongly modify the electron confinement profile and thus the strength of interfacial VrG scattering, independent from the carrier density. A dual-gate controlled nonlinear HalLeffect is a direct manifestation of.this profile, which can be quantitatively understood by a PoissonSchrodinger sub-band model. In particular, the large nonlinear dielectric response of SrTiO3 enables a very wide range of tunable density and disorder; far beyond that for conventional semiconductors. Our study provides a broad framework for understanding various, reported phenomena at the LaAlO3/SrTiO3 interface.
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