期刊
NANO LETTERS
卷 16, 期 4, 页码 2283-2288出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b04650
关键词
Gallium nitride; nanowire; environmental transmission electron microscopy; step flow
类别
资金
- U.S. DOE Office of Science Facility, at Brookhaven National Laboratory [DE-SC0012704]
We study the growth of GaN nanowires from liquid Au-Ga catalysts using environmental transmission electron microscopy. GaN wires grow in either (1120) or (1100) directions, by the addition of {1100} double bilayers via step flow with multiple steps. Step-train growth is not typically seen with liquid catalysts, and we suggest that it results from low step mobility related to the unusual double height step structure. The results here illustrate the surprising dynamics of catalytic GaN wire growth at the nanoscale and highlight striking differences between the growth of GaN and other III-V semiconductor nanowires.
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