期刊
NANO LETTERS
卷 16, 期 3, 页码 2090-2095出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b00193
关键词
Ionic barristor; graphene; transition metal dichalchogenides; Schottky contact; density functional theory
类别
资金
- Center for Low Energy Systems Technology (LEAST)
- STARnet phase of the Focus Center Research Program (FCRP)
- DARPA
- Nano Material Technology Development Program through National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2012M3A7B4049888]
- Priority Research Center Program through NRF - Ministry of Education [2010-0020207]
- MARCO
In this Letter, we use first-principles simulations to demonstrate the absence of Fermi-level pinning when graphene is in contact with transition metal dichalcogenides (TMDs). We find that formation of either an ohmic or Schottky contact is possible. Then we show that, due to the shallow density of states around its Fermi level, the work function of graphene can be tuned by ion adsorption. Finally we combine work function tuning of graphene and an ideal contact between graphene and TMDs to propose an ionic barristor design that can tune the work function of graphene with a much wider margin than current barristor designs, achieving a dynamic switching among p-type ohmic contact, Schottky contact, and n-type ohmic contact in one device.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据