期刊
NANO LETTERS
卷 16, 期 2, 页码 825-833出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b05125
关键词
III-V semiconductor; nanowires; molecular beam epitaxy; Hall measurements; quantum point contact; Cs-corrected scanning transmission electron microscopy
类别
资金
- French ANR through TERADOT [ANR-11-JS04-002-01]
- Ministry of Higher Education and Research, Nord-Pas de Calais
- Mid-Pyrenees Regional Council
- FEDER through Contrat de Projets Etat Region (CPER), IDEX WirOnSi
- Australian Research Council through Future Fellowship program [FT120100498]
- Generalitat de Catalunya SGR [1638]
- Spanish MINECO (e-ATOM) [MAT2014-51480-ERC]
- ICN2 Severo Ochoa Excellence Program
- Australian Research Council [FT120100498] Funding Source: Australian Research Council
- ICREA Funding Source: Custom
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. 1 Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm(2).V-1.s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb nanosails as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.
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