Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations

标题
Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations
作者
关键词
-
出版物
Journal of Semiconductor Technology and Science
Volume 23, Issue 4, Pages 228-235
出版商
The Institute of Electronics Engineers of Korea
发表日期
2023-09-01
DOI
10.5573/jsts.2023.23.4.228

向作者/读者发起求助以获取更多资源

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now