Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

The possibility of the formation of structures such as compounds of elements between chalcogenides and the transition group of metals in the crystal lattice of silicon is studied. This is an urgent problem in electronics. It is shown that, under certain technological conditions, a sufficient concentration of unit cells is formed, which leads to a change in the band structure of silicon itself; i.e., a micro- and nanoscale inclusion in silicon with a direct-gap structure is obtained. The possibilities of creating a fundamentally new class of photocells with an extended spectral sensitivity region, as well as light-emitting devices, light-emitting diodes, and lasers based on them, are shown.

Automated summary

The possibility of the formation of compound structures in the crystal lattice of silicon between chalcogenides and transition group metals is studied. Under certain technological conditions, a sufficient concentration of unit cells is formed in silicon, leading to a change in its band structure and the creation of micro- and nanoscale inclusions with a direct-gap structure. The study shows the potential for creating a new class of photocells with extended spectral sensitivity, as well as light-emitting devices, LEDs, and lasers based on these structures.