Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing

Considerations on the kinetic correlation between SiC nitridation and etching at the 4H-SiC(0001)/SiO2 interface in N2 and N2/H2 ambient

(2021) Tianlin Yang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Anomalous band alignment change of SiO2/4H–SiC (0001) and (000–1) MOS capacitors induced by NO-POA and its possible origin

(2020) Tae-Hyeon Kil et al.   APPLIED PHYSICS LETTERS

Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing

(2020) Keita Tachiki et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Passive–active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O2/Ar gas mixture and its impact on SiO2/SiC interface quality

(2018) Takuji Hosoi et al.   Applied Physics Express

Atomic state and characterization of nitrogen at the SiC/SiO2 interface

(2014) Y. Xu et al.   JOURNAL OF APPLIED PHYSICS

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

(2009) John Rozen et al.   JOURNAL OF APPLIED PHYSICS