Methods of Charge-Carrier Mobility Measurements in Structures Based on High-Resistivity Gallium Arsenide with Deep Centers

One of the most important parameters determining the efficiency of X-ray sensors is the mu center dot tau product, where mu is the charge-carrier mobility and tau is the carrier lifetime. This paper presents results of measurements of the charge-carrier mobility in high-resistivity (HR) GaAs:Cr sensors using two methods: the laser-induced transient-current technique (LTCT) and the Hall measurements. It has been found that the concentration of holes in the HR GaAs:Cr material exceeds that of electrons, whereas the value of the electron drift mobility is in the range 4000-4300 cm2/(V center dot s).

Automated summary

This paper presents measurements of charge-carrier mobility in high-resistivity GaAs:Cr sensors using two methods: the laser-induced transient-current technique (LTCT) and the Hall measurements. It is found that the concentration of holes exceeds that of electrons in the HR GaAs:Cr material, and the electron drift mobility is in the range of 4000-4300 cm2/(V·s).