Tunnelling assisted by Si-doped n-AlGaN layer on the p-side of 254 nm DUV LED

标题
Tunnelling assisted by Si-doped n-AlGaN layer on the p-side of 254 nm DUV LED
作者
关键词
-
出版物
OPTICAL AND QUANTUM ELECTRONICS
Volume 55, Issue 9, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2023-06-30
DOI
10.1007/s11082-023-04895-6

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