Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth

Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage

(2023) Wensen Ai et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Microscopic origins of anisotropy for the epitaxial growth of 3C-SiC (0001) vicinal surface: A kinetic Monte Carlo study

(2022) Wensen Ai et al.   JOURNAL OF APPLIED PHYSICS

Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces

(2021) Yuan Li et al.   COMPUTATIONAL MATERIALS SCIENCE

Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study

(2021) Xuejiang Chen et al.   VACUUM

Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

(2020) Tse-An Chen et al.   NATURE

Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface

(2019) Henryk Turski et al.   APPLIED SURFACE SCIENCE

Ab initio study for adsorption and desorption behavior at step edges of GaN(0001) surface

(2019) Toru Akiyama et al.   JOURNAL OF CRYSTAL GROWTH

An all-atom kinetic Monte Carlo model for chemical vapor deposition growth of graphene on Cu(1 1 1) substrate

(2019) Shuai Chen et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy

(2018) Hajime Fujikura et al.   APPLIED PHYSICS LETTERS

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

(2017) Dongwei Xu et al.   JOURNAL OF CHEMICAL PHYSICS

Stability diagrams for the surface patterns of GaN(0001¯) as a function of Schwoebel barrier height

(2017) Filip Krzyżewski et al.   JOURNAL OF CRYSTAL GROWTH

Effect of nucleation on instability of step meandering during step-flow growth on vicinal 3C-SiC (0001) surfaces

(2017) Yuan Li et al.   JOURNAL OF CRYSTAL GROWTH

Adsorbate interactions on the GaN(0001) surface and their effect on diffusion barriers and growth morphology

(2017) Manjusha Chugh et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth

(2016) Nils. A.K. Kaufmann et al.   JOURNAL OF CRYSTAL GROWTH

Growth Mechanism and Morphology of Hexagonal Boron Nitride

(2016) Zhuhua Zhang et al.   NANO LETTERS

Synthesis of Hexagonal Boron Nitride Monolayer: Control of Nucleation and Crystal Morphology

(2015) Yijing Stehle et al.   CHEMISTRY OF MATERIALS

Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains

(2015) Qinke Wu et al.   Scientific Reports

Growth of Large Single-Crystalline Two-Dimensional Boron Nitride Hexagons on Electropolished Copper

(2014) Roland Yingjie Tay et al.   NANO LETTERS

Step bunching process induced by the flow of steps at the sublimated crystal surface

(2012) Magdalena A. Załuska‐Kotur et al.   JOURNAL OF APPLIED PHYSICS

Emergence of regular meandered step structure in simulated growth of GaN(0001) surface

(2012) Magdalena A. ZaŁuska–Kotur et al.   JOURNAL OF CRYSTAL GROWTH

Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition

(2011) Ki Kang Kim et al.   NANO LETTERS

BN White Graphene with “Colorful” Edges: The Energies and Morphology

(2011) Yuanyue Liu et al.   NANO LETTERS

Step bunching of vicinal6H-SiC{0001}surfaces

(2009) Valery Borovikov et al.   PHYSICAL REVIEW B

Kinetic energy barriers on the GaN(0001) surface: A nucleation study by scanning tunneling microscopy

(2008) Hao Zheng et al.   PHYSICAL REVIEW B