Complex permittivity of semiconductor device under DC bias

Complex permittivity is one of the most important parameters in Maxwell's equations which will influence the semiconductor devices. In this article, the complex permittivity spectra of the PIN diodes from 1 Hz to 10(7) Hz are presented and discussed. It was found that the dielectric response strongly depended on the DC bias. Negative permittivity under DC bias occurred in some frequency range. The dielectric constant (real part of complex permittivity, epsilon') and dielectric loss (imaginary part of complex permittivity, epsilon '') have changed. It is shown that dielectric properties of the PIN diodes can be modulated by forward voltage and can be affected by their intrinsic layer thickness. These results demonstrate the potential for the semiconductor device control of electric signals useful for applications in optoelectronic integrated circuits, plasma antenna and plasmonic absorbers. (C) 2016 Elsevier B.V. All rights reserved.