4.7 Article

Rational design of a charge shunt: modification upon crystal facet engineering of semiconductor photocatalysts

期刊

CHEMICAL COMMUNICATIONS
卷 51, 期 56, 页码 11186-11189

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cc02700d

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资金

  1. National Natural Science Foundation of China [21173046, 21473031, 21273035]
  2. Science & Technology Plan Project of Fujian Province [2014Y2003]
  3. funding under National Basic Research Program of China (973 Program) [2013CB632405]

向作者/读者索取更多资源

Another excellent carrier shunt is artificially bridged over different exposed facets of a semiconductor, to achieve a unique architecture with superior photoactivity, which is mainly attributed to the facet-driven charge dual-selectivity-channel separation mechanism. This novel concept may break new ground in the rational modification of crystal facet engineering of a semiconductor.

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