Oxidized-Silicon-Terminated Diamond p-FETs With SiO2-Filling Shallow Trench Isolation Structures

MOSFETs on (110) C-H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-off Operation Realization

(2022) Benjian Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C

(2022) Takehiro Shimaoka et al.   IEEE ELECTRON DEVICE LETTERS

−10 V Threshold Voltage High-Performance Normally-OFF C–Si Diamond MOSFET Formed by p+-Diamond-First and Silicon Molecular Beam Deposition Approaches

(2022) Yu Fu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation

(2022) Xiaohua Zhu et al.   APPLIED SURFACE SCIENCE

Electrical Characterization of Metal/Al₂O₃/SiO₂/Oxidized-Si-Terminated (C–Si–O) Diamond Capacitors

(2022) Yu Fu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al2O3 Gate Insulator With Drain Current Density Over 300 mA/mm

(2022) Yu Fu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

C-Si Bonded Two-Dimensional Hole Gas Diamond MOSFET with Normally-off Operation and Wide Temperature Range Stability

(2021) Te Bi et al.   CARBON

Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator

(2020) Wenxi Fei et al.   APPLIED PHYSICS LETTERS

Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate-Stack

(2019) J. Urresti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Point‐Arc Remote Plasma Chemical Vapor Deposition for High‐Quality Single‐Crystal Diamond Selective Growth

(2019) Wenxi Fei et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

(2019) Jiangwei Liu et al.   IEEE ELECTRON DEVICE LETTERS

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

(2014) H. Kawarada et al.   APPLIED PHYSICS LETTERS

High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions

(2013) Takayuki Iwasaki et al.   IEEE ELECTRON DEVICE LETTERS

Refractory two-dimensional hole gas on hydrogenated diamond surface

(2012)   JOURNAL OF APPLIED PHYSICS

High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors

(2010) Kenji Ueda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Light intensity dependence of photocurrent gain in single-crystal diamond detectors

(2010) Meiyong Liao et al.   PHYSICAL REVIEW B

Chemical vapour deposition synthetic diamond: materials, technology and applications

(2009) R S Balmer et al.   JOURNAL OF PHYSICS-CONDENSED MATTER