A Novel SiC Trench MOSFET Embedding Auto-Adjust Source-Potential Region With Switching Oscillation Suppression

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

(2022) Jingwei Guo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current

(2021) Keita Tachiki et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance

(2021) Xu Li et al.   IEEE ELECTRON DEVICE LETTERS

Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation

(2021) Dongyoung Kim et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal

(2020) Ruito Aiba et al.   IEEE ELECTRON DEVICE LETTERS

A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices

(2020) Jian Chen et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

(2017) Richard K. Williams et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The Trench Power MOSFET: Part I—History, Technology, and Prospects

(2017) Richard K. Williams et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Review of Silicon Carbide Power Devices and Their Applications

(2017) Xu She et al.   IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

(2016) Huaping Jiang et al.   IEEE ELECTRON DEVICE LETTERS

4H–SiC Step Trench Gate Power Metal–Oxide–Semiconductor Field-Effect Transistor

(2016) Ying Wang et al.   IEEE ELECTRON DEVICE LETTERS