Study of Al/a-Si:H/SiO2/n-Si/Al based bottom gate thin film transistor using RPCVD SiO2 and PECVD a-Si:H thin films: probably needed focus for bio-sensing application

标题
Study of Al/a-Si:H/SiO2/n-Si/Al based bottom gate thin film transistor using RPCVD SiO2 and PECVD a-Si:H thin films: probably needed focus for bio-sensing application
作者
关键词
-
出版物
FERROELECTRICS
Volume 614, Issue 1, Pages 194-200
出版商
Informa UK Limited
发表日期
2023-09-01
DOI
10.1080/00150193.2023.2227074

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