Modulation of sulfur partial pressure in sulfurization to significantly improve the photoelectrochemical performance over the Cu2ZnSnS4 photocathode

Cu2ZnSnS4 photocathodes with excellent photoelectrochemical properties were fabricated via a facile method of adjusting the sulfur partial pressure in a semi-closed system, which achieved a maximum photocurrent-density of 1.8 mA cm(-2) under irradiation of a solar simulator which is 9-fold larger than that synthesized in an open system.