Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS2) by zinc oxide (ZnO)

In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS2 by ZnO. The ZnO doping effects were systematically investigated by Raman spectroscopy and electrical/optical measurements (I-D-V-G with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS2-based electronics (Ion up arrow, mu(FE)up arrow, n up arrow) owing to reduction of the effective barrier height between the source and the MoS2 channel. We also monitored the effects of ZnO doping during exposure to air; reduction in Delta V-TH of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS2 photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18 x 10(3) A/W) and detectivity (5.94 x 10(12) Jones) of the ZnO-doped photodetector were observed for 520 nm laser exposure. (C) 2016 Elsevier Ltd. All rights reserved.