Visible Near-Infrared Photodetection Based on Ta2NiSe5/WSe2 van der Waals Heterostructures

The increasing interest in two-dimensional materials with unique crystal structures and novel band characteristics has provided numerous new strategies and paradigms in the field of photodetection. However, as the demand for wide-spectrum detection increases, the size of integrated systems and the limitations of mission modules pose significant challenges to existing devices. In this paper, we present a van der Waals heterostructure photodetector based on Ta2NiSe5/WSe2, leveraging the inherent characteristics of heterostructures. Our results demonstrate that this detector exhibits excellent broad-spectrum detection ability from the visible to the infrared bands at room temperature, achieving an extremely high on/off ratio, without the need for an external bias voltage. Furthermore, compared to a pure material detector, it exhibits a fast response and low dark currents (similar to 3.6 pA), with rise and fall times of 278 mu s and 283 mu s for the response rate, respectively. Our findings provide a promising method for wide-spectrum detection and enrich the diversity of room-temperature photoelectric detection.

Automated summary

In this paper, a van der Waals heterostructure photodetector based on Ta2NiSe5/WSe2 is presented, utilizing the inherent characteristics of heterostructures. The detector exhibits excellent broad-spectrum detection ability from the visible to the infrared bands at room temperature, achieving an extremely high on/off ratio without the need for an external bias voltage. Additionally, it shows a fast response and low dark currents compared to a pure material detector.