期刊
CERAMICS INTERNATIONAL
卷 41, 期 2, 页码 2572-2575出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2014.11.004
关键词
Films; Oxides; MOCVD; Resistivity
资金
- National Natural Science Foundation of China [51072102]
Tin-doped gallium oxide (Ga2O3:Sn) films with different Sn contents were deposited on MgAl2O4 (1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) technique. Structural analysis revealed that the films with 1% to 5% Sn were polycrystalline structure of beta-Ga2O3 whereas the samples containing 8-12% Sn were microcrystalline. The resistivity of the film could be reduced by almost eleven orders of magnitude by Sn doping, the 10% Sn doped sample possessing the best conducting property with resistivity of about 3.1 x 10(-2) Omega cm. The average transmittance for the 10% Sn doped sample exceeded 80% with a band gap of about 4.14 eV. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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