Graphene/Si-Quantum-Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

标题
Graphene/Si-Quantum-Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 27, Issue 16, Pages 2614-2620
出版商
Wiley
发表日期
2015-03-17
DOI
10.1002/adma.201500040

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