期刊
JOURNAL OF SEMICONDUCTORS
卷 43, 期 11, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1674-4926/43/11/112302
关键词
near-infrared photodetector; flexible; GaSb nanowires; CMOS-compatible catalyst
资金
- National Key Ramp
- D Program of China [2017YFA0305500]
- National Natural Science Foundation of China [61904096, 11504207]
- Taishan Scholars Programof Shandong Province [tsqn201812006]
- Shandong University Youth Innovation Supporting Program [2019-KJN020]
- Shandong University Multidisciplinary Research and Innovation Team of Young Scholars [2020QNQT015]
- Outstanding youth scholar and Qilu young scholar programs of Shandong University
In this study, high-quality narrow bandgap semiconductor nanowires were successfully prepared and applied to flexible near-infrared photodetectors. The prepared nanowires showed uniform morphology, balanced stoichiometry, high-quality crystallinity, and phase purity. The flexible photodetector exhibited high sensitivity and excellent photoresponse, with outstanding electrical and mechanical flexibility properties.
High-quality narrow bandgap semiconductors nanowires (NWs) challenge the flexible near-infrared (NIR) photodetectors in next-generation imaging, data communication, environmental monitoring, and bioimaging applications. In this work, complementary metal oxide semiconductor-compatible metal of Ag is deposited on glass as the growth catalyst for the surfactant-assisted chemical vapor deposition of GaSb NWs. The uniform morphology, balance stoichiometry, high-quality crystallinity, and phase purity of as-prepared NWs are checked by scanning electron microscopy, energy dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, and X-ray diffraction. The electrical properties of as-prepared NWs are studied by constructing back-gated field-effect-transistors, displaying a high I (on)/I (off) ratio of 10(4) and high peak hole mobility of 400 cm(2)/(V center dot s). Benefiting from the excellent electrical and mechanical flexibility properties, the as-fabricated NW flexible NIR photodetector exhibits high sensitivity and excellent photoresponse, with responsivity as high as 618 A/W and detectivity as high as 6.7 x 10(10) Jones. Furthermore, there is no obvious decline in NIR photodetection behavior, even after parallel and perpendicular folding with 1200 cycles.
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